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Extra resources for Molecular Beam Epitaxy, Edition: 1st
B 12, 1212 (1975). St. Chem. U; 33, 44, and 299 (1975). j Mater. 5, 247 (1976). Phys. , _n» 538 (1977>• 45, 892 (1974). Phys. 41, 3543 (1970). MBE of Compound Semiconductors 47 THE AUTHOR Dr. Donald L. Smith Dr. , University of California at Berkeley, 1969. At Berkeley he studied the catalytic behavior of single-crystal platinum using molecular beams, mass spectroscopy and LEED. For the past 8 years he has been on the research staff at Perkin-Elmer and has been mostly involved with the growth of various dielectric, semiconductor, and metallic thin films.
21. Y. Cho and I. Hayashi, Solid St. Phys. Elec. Lett. _H, 125 (1971). 22. Y. Cho and I. Hayashi, J. appl. Phys. 23. J. Strauss, J. Electron. 2, 553 (1973). 24. L. Y. Pickhardt, J. eleotrochem. Mater. 19_, 143 (1971). 42, 4422 (1971). Soc. (1978) 125, 2042 . 25. J. F. Brebrick, J. Phys. de Physique. 26. C. Harman, J. Nonmetals 27. R. S. D. Senturia, J. appl. 28. N. L. Guldi, J. Nonmetals 29. A. Hemstreet, Phys. 30. S-S. 9 31. L. Y. Pickhardt, J. Electon. 32. D. H. Olsen and M. Ettenberg, Appl. 33.
Holloway and J. N. Walpole devices in which the unique properties of thin films are exploited. Heterostructure optical waveguides are described briefly followed by a review of diode laser results obtained by MBE and the hot-wall technique. These results are for thin-film PbTe lasers grown on BaF 2 and for a variety of devices grown on I-VI substreates including single hetero structure, double heterostructure, homostrueture, and distributed feedback lasers. 1. INTRODUCTION The first major application of the IV-VI semiconductors was the use of PbS layers as infrared-sensitive photoconductors in the 1940 f s.