Optical and Electronic Phenomena in Sol-Gel Glasses and by Christian K. Jorgensen, Renata Reisfeld, M.A. Aegerter, R.C.

By Christian K. Jorgensen, Renata Reisfeld, M.A. Aegerter, R.C. Mehrota, I. Oehme, R. Reisfeld, S. Sakka, O. Wolfbeis, C.K. Jorgensen

This quantity on optical and digital phenomena in sol-gel glasses and sleek program covers such subject matters as sol-gels and chemical sensors, sol-gel chromogenic fabrics and units, and lasers according to sol-gel expertise.

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Additional info for Optical and Electronic Phenomena in Sol-Gel Glasses and Modern Application (Structure and Bonding) (Volume 85)

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This film gives a very largesurface area, attaining a high efficiency of conversion of light to electricity, reaching 10% in this device. _:. ~ ~_~-~'~[~----'i I ' - " - I +eI" - - I"~'+e-'~X e" ELECTRICALLYCONDUCTIVETRANSPARENTLAYER LIGHT Fig. 14. Construction of a cell module with transparent glass electrode. I. and 7: glass sheets, 2 and 6: transparent conductive layer of fluorine doped tin oxide, 3: electrolyte, 4: dye layer, 5: colloidal TiO membrane (about 10 gm thick). After Gr/itzel [110] 26 S.

Zieba J, Zhang Y, Prasad PN (1992) SPIE Vol 1758 Sol-Gel Optics II: 403 82. Kim J, Plawski JL, Lapuerta R, Korenowski GM (1992) Chem Mater 4:249 83. Hashimoto T, Yoke T, Sakka S (1993) J Ceram Soc Jpn 101:64 84. Hashimoto T, Yoke T, Sakka S (1993) Bull Chem SOc Jpn 67:653 85. Nogami M, Yamada K, Watanabe M, Nagasaka K (1981) 99:625 86. Bagnall CM, Zarsycki J (1991) J Non-Cryst Solids 135:182 87. Nogami M, Zhu YQ, Tohyama Y, Nagasaka K, Tokizaki T, Nakamura (1991) J Am Ceram SOc 74:238 88. Kawaguchi H, Miyakawa T, Tanno N, Kobayashi Y, Kurokawa (1991) Jpn J Appl Phys 30: L280 89.

Y3-~Bi~Fe5012 and Y3-xBi~Fes-~AlyOt2 coating films [126, 127] were prepared from starting solutions containing corresponding metal nitrates as starting materials and ethylene glycol or ethyl acetyl acetate and water as solvents. Silica glass plate and gadolinium gallium garnet single crystals were used as substrate. After dip-coating, the films were heated to various temperatures between 500 and 800 °C for crystal formation, and magnetic properties were measured. 4012. Cu-dope d Bi, As: DylG and Cu-doped Bi, Ga: DylG thin films were prepared on glass substrate from solutions consisting of metal nitrates and alk0xides as starting materials and ethanol and water as solvents [128].

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